Q-Band Uplink Solid State Power Amplifier (SSPA)

TECHNOLOGY AREA(S): Space Platforms The technology within this topic is restricted under the International Traffic in Arms Regulation (ITAR), 22 CFR Parts 120-130, which controls the export and import of defense-related material and services, including export of sensitive technical data, or the Export Administration Regulation (EAR), 15 CFR Parts 730-774, which controls dual use items. Offerors must disclose any proposed use of foreign nationals (FNs), their country(ies) of origin, the type of visa or work permit possessed, and the statement of work (SOW) tasks intended for accomplishment by the FN(s) in accordance with section 5.4.c.(8) of the solicitation and within the AF Component-specific instructions. Offerors are advised foreign nationals proposed to perform on this topic may be restricted due to the technical data under US Export Control Laws. Please direct questions to the AF SBIR/STTR Contracting Officer, Ms. Gail Nyikon, gail.nyikon@us.af.mil. OBJECTIVE: Develop efficient Q-band solid-state power amplifiers (SSPAs) for low-cost ground terminal applications. DESCRIPTION: Efficient, high-power performance is required to support low-cost terminals for future military satellite communications (SATCOM) ground terminals. Power amplifier efficiency translates to the terminal's dc power consumption requirements, as well as additional hardware/structures to address corresponding cooling requirements. Reductions in the size, weight, and power (SWaP) are critical to lowering ground terminal power consumption, footprint, and cost. Innovative high-efficiency circuit techniques, in combination with high-performance power technologies, have the potential of producing efficient SSPAs to meet this low-cost terminal need. Improved power amplifier efficiency may be achieved with solid-state power technologies such as gallium nitride (GaN), while efficiency may be addressed with techniques such as envelope tracking. Selected approaches should also address low-loss power combining towards the demonstration of a fully integrated SSPA. The overall approach should meet or surpass current state-of-the-art performance, while providing cost, size, weight, and power (CSWaP) improvements. Therefore, required performance for the Q-band SATCOM SSPA includes power-combined saturated output greater than 45 watts over 43.5 to 45.5 GHz, with power-added efficiency greater than 35 percent. The selected power amplifier approach should support reliable operation over the -40 degree to +80 degree Celsius operating temperature range. REFERENCES: PHASE I: Concept design and circuit simulations of the efficient Q-band monolithic integrated circuit (MMIC) power amplifier based on a suitable, high-performance millimeter-wave transistor process, as well as the design of the higher-level SSPA. PHASE II: Fabrication of the prototype high-efficiency Q-band power amplifiers (MMICs, power combiner, integrated SSPA) according to Phase I design. Characterization of the power amplifier and SSPA for output power and efficiency under typical signal and environmental conditions. PHASE III DUAL USE APPLICATIONS: Military high power amplifier applications include ground terminal Q-band communications uplink electronics for advanced extremely high frequency (AEHF). Commercial Q-band high power amplifier applications include ground electronics where millimeter-wave power sources are required. TPOC-1: A. Brown, et al., W-band GaN Power Amplifier MMICs," Microwave Symposium Digest, 2011 IEEE MTT-S International, Jun. 2011. Phone: P. Khan, "A Ka-Band Wideband-Gap Solid-State Power Amplifier: Architecture Identification," IPN Progress Report 42-162, Aug. 2006. Email: F. Colomb and A Platzker, "A 3-Watt Q-Band GaAs pHEMT Power Amplifier MMIC for High Temperature Operation, Microwave Symposium Digest," 2006 IEEE MTT-S International, pp. 897-900, 2006.